1 d a t a s h e e t : c 3 d 0 4 0 6 0 e r e v . c C3D04060E Csilicon carbide schottky diode z -r ec ? r ectifier features ? 600-volt schottky rectifer ? optimized for pfc boost diode application ? zero reverse recovery current ? zero forward recovery voltage ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? positive temperature coeffcient on v f benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies ? power factor correction - typical pfc p out : 400w-600w package to-252-2 maximum ratings symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 600 v v rsm surge peak reverse voltage 600 v v dc dc blocking voltage 600 v i f(avg) average forward current 4 a t c <160?c i frm repetitive peak forward surge current 22 17 a t c =25?c, t p =10 ms, half sine wave d=0.3 t c =110?c, t p =10 ms, half sine wave d=0.3 i fsm non-repetitive peak forward surge current 31.9 28.5 a t c =25?c, t p =10 ms, half sine wave d=0.3 t c =110?c, t p =10 ms, half sine wave d=0.3 i fsm non-repetitive peak forward surge current 110 a t c =25?c, t p =10 s, pulse p tot power dissipation 75 32.5 w t c =25?c t c =110?c t j , t stg operating junction and storage temperature -55 to +175 ?c to-220 mounting torque 1 8.8 nm lbf-in m3 screw 6-32 screw part number package marking C3D04060E to-252-2 c3d04060 pin 1 pin 2 case v rrm = 600 v i f(avg) = 4 a q c = 8.5 nc subject to change without notice. www.cree.com
2 C3D04060E rev. c electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.5 1.8 1.7 2.4 v i f = 4 a t j =25c i f = 4 a t j =175c i r reverse current 10 20 50 100 a v r = 600 v t j =25c v r = 600 v t j =175c q c total capacitive charge 8.5 nc v r = 600 v, i f = 4a d i /d t = 500 a/ s t j = 25c c total capacitance 251 22 21 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz note: 1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r jc to-252 package thermal resistance from junction to case 2.02 c/w typical performance figure 1. forward characteristics figure 2. reverse characteristics t j = 25c t j = 75c t j = 125c t j = 175c i f forward current (a) v f forward voltage (v) 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 10 9 8 7 6 5 4 3 2 1 0 0 100 200 300 400 500 600 700 800 t j = 25c t j = 75c t j = 125c t j = 175c i r reverse current ( a) v r reverse voltage (v)
3 C3D04060E rev. c figure 3. current derating figure 5. transient thermal impedance figure 4. capacitance vs. reverse voltage typical performance i f(peak) peak forward current (a) t c case temperature ( c ) * frequency > 1khz 25 50 75 100 125 150 175 40 35 30 25 20 15 10 5 0 20% duty* 30% duty* 50% duty* 70% duty* dc 140 120 100 80 60 40 20 0 1 10 100 1000 c capacitance (pf) v r reverse voltage (v) time (s) zth (c/w)
4 C3D04060E rev. c typical performance 80 70 60 50 40 30 20 10 0 power dissipation (w) t c case temperature ( c ) 25 50 75 100 125 150 175 figure 6. power derating
5 C3D04060E rev. c pos inches millimeters min max min max a .250 .289 6.350 7.341 b .197 .215 5.004 5.461 c .027 .050 .686 1.270 d* .270 .322 6.858 8.179 e .178 .182 4.521 4.623 f .025 .045 .635 1.143 g 44? 46? 44? 46? h .380 .410 9.652 10.414 j .090 typ 2.286 typ k 6? 8? 6? 8? l .086 .094 2.184 2.388 m .018 .034 .457 .864 n .035 .050 .889 1.270 p .231 .246 5.867 6.248 q 0.00 .005 0.00 .127 r r0.010 typ r0.254 typ s .017 .023 .432 .584 t .038 .045 .965 1.143 u .021 .029 .533 .737 package dimensions package to-252-2 note: * tab d may not be present *
6 this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems, or weapons systems. copyright ? 2009-2011 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks and z-rec is a trademark of cree, inc. 6 C3D04060E rev. c cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power recommended solder pad layout part number package marking C3D04060E to-252-2 c3d04060 the levels of environmentally sensitive, persistent biologically toxic (pbt), persistent organic pollutants (pop), or otherwise restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2002/95/ec on the restriction of the use of certain hazardous substances in electrical and electronic equipment (rohs), as amended through april 21, 2006. to-252-2 diode model v t r t diode model csd10060 vf t = v t + if*r t v t= 0.92 + (t j * - 1.35*10 - 3 ) r t= 0.052 + (t j * 0.29*10 - 3 ) note: t j = diode junction temperature in degrees celcius vf t = v t +if*r t v t = 0.98+(t j * -1.8*10 -3 ) r t = 0.10+(t j * 9.16*10 -4 )
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